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DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BAV199 Low-leakage double diode
Product specification Supersedes data of 1996 Mar 13 1999 May 11
Philips Semiconductors
Product specification
Low-leakage double diode
FEATURES * Plastic SMD package * Low leakage current: typ. 3 pA * Switching time: typ. 0.8 s * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 85 V * Repetitive peak forward current: max. 500 mA. APPLICATION * Low-leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are connected in series.
Top view
handbook, 4 columns
BAV199
PINNING PIN 1 2 3 anode cathode anode; cathode DESCRIPTION
2
1
2 3 3
1
MAM107
Marking code: JYp = made in Hong Kong; JYt = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 tp = 1 s tp = 1 ms tp = 1 s Ptot Tstg Tj Note 1. Device mounted on a FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 4 1 0.5 250 +150 150 A A A mW C C single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 - - - - - 85 75 160 140 500 V V mA mA mA PARAMETER CONDITIONS MIN. MAX. UNIT
1999 May 11
2
Philips Semiconductors
Product specification
Low-leakage double diode
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 75 V VR = 75 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 0.003 3 2 0.8 5 80 - 3 - - - - 900 PARAMETER CONDITIONS TYP.
BAV199
MAX.
UNIT
mV mV mV mV nA nA pF s
1000 1100 1250
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W K/W
1999 May 11
3
Philips Semiconductors
Product specification
Low-leakage double diode
GRAPHICAL DATA
BAV199
handbook, halfpage
300
MLB756
handbook, halfpage
300
MLB752 - 1
IF (mA) 200
IF (mA) 200
(1) (2) (3)
single diode loaded 100
100
double diode loaded 0 0 100 T amb ( oC) 200
0 0 0.4 0.8 1.2 V F (V) 1.6
(1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values.
Device mounted on a FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage; per diode.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 10
102
103
tp (s)
104
Based on square wave currents; Tj = 25 C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
1999 May 11
4
Philips Semiconductors
Product specification
Low-leakage double diode
BAV199
10 2 handbook, halfpage IR (nA) 10
(1)
MLB754
handbook, halfpage
2
MBG526
Cd (pF)
1
1
10 1
10 2
(2)
10 3
0
0
50
100
150
T j ( oC)
200
0
5
10
15
VR (V)
20
VR = 75 V. (1) Maximum values. (2) Typical values.
f = 1 MHz; Tj = 25 C.
Fig.5
Reverse current as a function of junction temperature; per diode.
Fig.6
Diode capacitance as a function of reverse voltage; per diode; typical values.
handbook, full pagewidth
tr D.U.T. 10% SAMPLING OSCILLOSCOPE R = 50 i VR 90%
tp t
RS = 50 V = VR I F x R S
IF
IF
t rr t
(1)
MGA881
input signal
output signal
Fig.7 Reverse recovery time test circuit and waveforms.
1999 May 11
5
Philips Semiconductors
Product specification
Low-leakage double diode
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BAV199
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 May 11
6
Philips Semiconductors
Product specification
Low-leakage double diode
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BAV199
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 May 11
7
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 May 11
Document order number:
9397 750 05946

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